Improvement of O 2 plasma etching for diamond power MOSFET fabrication - Service Techniques et Équipements Appliqués à la Microélectronique
Article Dans Une Revue Microelectronic Engineering Année : 2024

Improvement of O 2 plasma etching for diamond power MOSFET fabrication

Résumé

We present the experimental results of oxygen-based ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etching) etching of diamond layers, focusing on the impact of different etching masks, namely metallic (aluminum) and dielectric (SiO2) ones. Additionally, we examine the effects of bias power and ICP plasma power. Our study aims to prevent over-etching at the bottom of sidewalls, achieve high etch rates with smooth surface roughness, and ensure good etch selectivity between the mask and diamond. Furthermore, we investigate how the doping of diamond layers (p-type or n-type) and their crystalline quality influence the etch rate and the resulting surface morphology.
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Dates et versions

hal-04682037 , version 1 (30-08-2024)

Identifiants

  • HAL Id : hal-04682037 , version 1

Citer

Raid Gourad, Ralph Makhoul, Karine Isoird, Josiane Tasselli, Alain Cazarré, et al.. Improvement of O 2 plasma etching for diamond power MOSFET fabrication. Microelectronic Engineering, In press. ⟨hal-04682037⟩
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